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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
430,020 pcs
|
430020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
515 pcs
|
515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Capacitance | |
| Collector Current (DC) | |
| Collector Cutoff Current (Maximum @ IE = 0; VCB = 20 V) | |
| Collector Cutoff Current (Maximum @ IE = 0; VCB = 20 V; Tj = 125 °C) | |
| Collector Emitter Saturation Voltage (Maximum @ Ic=10 mA, Ib=1 mA) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (@ IC = 10 mA; VCE = 1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=100 mA, VCE=2 V) | |
| DC Current Gain Hfe (Minimum @ IC = 10 mA; VCE = 1 V; Tamb = -55 °C) | |
| Delay Time | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Ambient Temperature | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Rise Time | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| Turn Off Time | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PMBT2369,215 is an NPN switching transistor housed in a compact SOT23 plastic package. It is engineered for high-speed switching, particularly in portable equipment.
Key electrical characteristics include a maximum collector-emitter voltage of 15 V and a continuous collector current of 200 mA. The transistor offers a DC current gain (hFE) ranging from 40 to 120 at 10 mA and 1 V. Its transition frequency (fT) is a minimum of 500 MHz at 10 mA and 10 V, indicating its suitability for high-frequency operations.
This device operates within a wide temperature range from -65 °C to +150 °C, with a junction temperature also rated up to 150 °C. The total power dissipation is limited to 250 mW at an ambient temperature of 25 °C when mounted on an FR4 printed-circuit board.
The PMBT2369,215 is available in a surface mountable TO-236AB package, also known as SOT23-3. Its small footprint makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PMBT2369,215 is 15 V.
The continuous collector current (IC) rating for the PMBT2369,215 is 200 mA.
The transition frequency (fT) of the PMBT2369,215 is a minimum of 500 MHz at 10 mA and 10 V.
The PMBT2369,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating ambient temperature range for the PMBT2369,215 is -65 °C to +150 °C.
The DC current gain (hFE) is typically between 40 and 120 at 10 mA and 1 V.