PMBS3906,215 The Nexperia USA Inc. PMBS3906,215 is a PNP general-purpose transistor. It features a 40V collector-emitter voltage and 100mA collector current capability.
Mfr Part #:

PMBS3906,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PMBS3906,215 is a PNP general-purpose transistor. It features a 40V collector-emitter voltage and 100mA collector current capability.
Total Stock: 259,020 pcs
$ Price Range: $0.48

PMBS3906,215 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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259,020 pcs
259020 pcs On Request 1 On Request On Request On Request On Request On Request

PMBS3906,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Current
Current Leakage (Maximum @ VCB = -30 V; IE = 0 A; Tamb = 25 °C)
Current Leakage (Maximum @ VEB = -5 V; IC = 0 A; Tamb = 25 °C)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Saturation (Maximum @ IC = -10 mA; IB = -1 mA; Tamb = 25 °C)
Voltage Saturation (Maximum @ IC = -50 mA; IB = -5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C)
voltage (Maximum @ open collector)
voltage (Maximum @ open emitter)

PMBS3906,215 Description

Short technical summary and product information.

The Nexperia USA Inc. PMBS3906,215 is a PNP general-purpose transistor designed for switching and amplification applications. It offers a collector current capability of 100 mA and a collector-emitter voltage of up to 40 V.

 

This transistor is housed in a compact TO-236AB (SOT-23) surface-mount package, making it suitable for space-constrained designs. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at 10mA and 1V, and a collector-emitter saturation voltage (VCEsat) of -400 mV at 50mA.

 

The device operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 250 mW at 25°C ambient temperature. Its NPN complement is the PMBS3904.

 

Applications for the PMBS3906,215 include general-purpose switching and amplification circuits where a reliable PNP transistor is required.

PMBS3906,215 Quick Information

Product Type: PNP Transistor
Canonical Name: PMBS3906,215 PNP General-Purpose Transistor
Subcategory: Single

PMBS3906,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PMBS3906,215 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMBS3906,215 Features

  • PNP general-purpose transistor.
  • 40V collector-emitter voltage rating.
  • 100mA collector current capability.
  • SOT-23 surface-mount package.
  • Suitable for switching and amplification.

PMBS3906,215 Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for signal processing devices
  • Applicable in power management modules

PMBS3906,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the PMBS3906,215?

The collector-emitter voltage rating is 40V.

What is the maximum collector current for the PMBS3906,215?

The maximum collector current is 100 mA.

What is the DC current gain (hFE) of the PMBS3906,215?

The DC current gain (hFE) is 100 to 300 at 10mA and 1V.

What is the operating temperature range for the PMBS3906,215?

The operating temperature range is -65°C to 150°C.

What package type is the PMBS3906,215 supplied in?

The PMBS3906,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.

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