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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,921,020 pcs
|
1921020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Emitter Saturation Voltage (Maximum @ Ic=50 mA, Ib=5 mA) | |
| Base-Emitter Saturation Voltage (@ IC = 10 mA; IB = 1 mA) | |
| Collector Capacitance | |
| Collector Current Capability (Maximum) | |
| Collector Cut-Off Current | |
| Collector Emitter Saturation Voltage (Maximum @ Ic=10 mA, Ib=1 mA) | |
| Collector Emitter Voltage (Maximum @ open base) | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Voltage (Maximum @ IC = 50 mA; IB = 5 mA) | |
| Current | |
| DC Current Gain (hFE) (@ IC = 10 mA; VCE = 1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=100 mA, VCE=1 V) | |
| DC Current Gain (hFE) (Minimum @ Ic = 0.1 mA, Vce = 1 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=1 mA, Vce=1 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=50 mA, Vce=1 V) | |
| Delay Time | |
| Emitter Capacitance | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Operating Ambient Temperature | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Rise Time | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency (fT) (Minimum @ IC = 10 mA; VCE = 20 V) | |
| Turn Off Time | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PMBS3904,215 is an NPN bipolar junction transistor (BJT) suitable for general purpose switching and amplification applications. It is housed in a compact SOT-23 surface-mount package.
This transistor offers a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) capability of up to 100mA. Its DC current gain (hFE) ranges from 100 to 300 at 10mA and 1V. The device also features a transition frequency (fT) of 180MHz.
Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 300mV at 50mA and 5mA, and a base-emitter saturation voltage (VBEsat) between 650mV and 850mV at 10mA and 1mA. The operating temperature range is from -65°C to +150°C.
The PMBS3904,215 is designed for applications such as telephony and professional communication equipment, providing reliable performance in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40V.
The continuous collector current capability (IC) is 100mA.
The transistor is supplied in a SOT-23-3 surface mount package.
The operating ambient temperature range is -65°C to +150°C.
The DC current gain (hFE) is between 100 and 300 at 10mA collector current and 1V collector-emitter voltage.
The transition frequency (fT) is a minimum of 180MHz.