PMBFJ310 The Philips PMBFJ310 is an N-channel RF Power MOSFET designed for amplifier applications. It offers a breakdown voltage of 65V and a maximum drain current of 28A.
Mfr Part #:

PMBFJ310

Available from 1 distributors
Mfr Name: Philips
Philips
The Philips PMBFJ310 is an N-channel RF Power MOSFET designed for amplifier applications. It offers a breakdown voltage of 65V and a maximum drain current of 28A.
✓ Total Stock: 1,510 pcs
$ Price Range: $0.99

PMBFJ310 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,510 pcs
1510 pcs On Request 1 On Request On Request On Request On Request On Request

PMBFJ310 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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PMBFJ310 Description

Short technical summary and product information.

The Philips PMBFJ310 is an N-channel RF Power MOSFET utilizing Metal-Oxide Semiconductor technology. It is specifically designed for amplifier applications within the S-band, operating in the frequency range of 2.3GHz to 2.4GHz.

 

This component features a maximum drain current of 28A and a minimum breakdown voltage of 65V. It provides a typical gain of 18dB and an output power of 20W. The test conditions include a test voltage of 28V and a test current of 900mA.

 

The PMBFJ310 is housed in a SOT-502A package, with a rectangular shape and flat terminal form. The package body is constructed from ceramic with a metal-sealed cofired finish. The transistor element material is silicon. It is supplied in tape and reel packaging with a standard package quantity of 100 units.

PMBFJ310 Quick Information

Product Type: RF Power MOSFET
Canonical Name: PMBFJ310 RF Power MOSFET
Subcategory: RF Power MOSFET

PMBFJ310 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

PMBFJ310 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PMBFJ310 Features

  • N-channel RF Power MOSFET
  • 65V breakdown voltage
  • 28A maximum drain current
  • 18dB typical gain
  • 2.3GHz to 2.4GHz frequency range

PMBFJ310 Applications

  • Ideal for RF power amplifier circuits
  • Operates in 2.3-2.4 GHz frequency band
  • Delivers 20W output with 18dB gain
  • N-channel LDMOS for high-gain amplification

PMBFJ310 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain current for the PMBFJ310?

The maximum drain current (ID) for the PMBFJ310 is 28A.

What is the minimum breakdown voltage of the PMBFJ310?

The minimum breakdown voltage (DS Breakdown Voltage-Min) for the PMBFJ310 is 65V.

What is the operating frequency range for the PMBFJ310?

The PMBFJ310 operates in the frequency range of 2.3GHz to 2.4GHz.

What is the typical gain of the PMBFJ310?

The typical gain for the PMBFJ310 is 18dB.

What is the output power of the PMBFJ310?

The output power for the PMBFJ310 is 20W.

What package type is the PMBFJ310 supplied in?

The PMBFJ310 is supplied in a SOT-502A package.

How is the PMBFJ310 packaged for distribution?

The PMBFJ310 is packaged in Tape & Reel (TR).

PMBFJ310 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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MA4P789ST-287
MA4P789ST-287
MACOM Technology Solutions
The MACOM Technology Solutions MA4P789ST-287 is an N-channel RF Power MOSFET designed for amplifier applications. It operates within the 2.3GHz to 2.4GHz frequency range.
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