| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,510 pcs
|
1510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Philips PMBFJ310 is an N-channel RF Power MOSFET utilizing Metal-Oxide Semiconductor technology. It is specifically designed for amplifier applications within the S-band, operating in the frequency range of 2.3GHz to 2.4GHz.
This component features a maximum drain current of 28A and a minimum breakdown voltage of 65V. It provides a typical gain of 18dB and an output power of 20W. The test conditions include a test voltage of 28V and a test current of 900mA.
The PMBFJ310 is housed in a SOT-502A package, with a rectangular shape and flat terminal form. The package body is constructed from ceramic with a metal-sealed cofired finish. The transistor element material is silicon. It is supplied in tape and reel packaging with a standard package quantity of 100 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the PMBFJ310 is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the PMBFJ310 is 65V.
The PMBFJ310 operates in the frequency range of 2.3GHz to 2.4GHz.
The typical gain for the PMBFJ310 is 18dB.
The output power for the PMBFJ310 is 20W.
The PMBFJ310 is supplied in a SOT-502A package.
The PMBFJ310 is packaged in Tape & Reel (TR).