| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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366 pcs
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366 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MACOM Technology Solutions MA4P789ST-287 is a single N-channel RF Power MOSFET utilizing Metal-Oxide Semiconductor technology. It is designed for amplifier applications and operates within the 2.3GHz to 2.4GHz frequency range.
Key electrical specifications include a maximum drain current of 28A, a minimum breakdown voltage of 65V, and a typical gain of 18dB. The output power is rated at 20W. The device is tested at 28V with a test current of 900mA.
This MOSFET features a rectangular package shape with a FLAT terminal form and is supplied in a SOT-502A package. The package body material is described as CERAMIC, METAL-SEALED COFIRED. The component is configured as a single transistor element made of SILICON.
The MA4P789ST-287 is compliant with RoHS3 standards and is classified as Moisture Sensitivity Level 1 (Unlimited). It is supplied in Tape & Reel packaging with a standard package quantity of 100 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the MA4P789ST-287 is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the MA4P789ST-287 is 65V.
The MA4P789ST-287 operates in the frequency range of 2.3GHz to 2.4GHz.
The typical gain for the MA4P789ST-287 is 18dB.
The output power rating for the MA4P789ST-287 is 20W.
The MA4P789ST-287 is supplied in a SOT-502A package.
The MA4P789ST-287 is RoHS3 Compliant.