Mfr Part #:

PHN203,518

The Nexperia PHN203,518 is a dual N-channel logic level MOSFET designed for high frequency applications. It features a 30V drain-source voltage and a 6.3A drain current.

✓ Total Stock: 248 pcs

$ Price Range: $1.96

PHN203,518 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	248 pcs On Request	248 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

PHN203,518 Description

Short technical summary and product information.

The Nexperia PHN203,518 is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This device is designed for logic level gate drive sources and offers fast switching characteristics, making it suitable for high frequency applications. It is qualified for use in computing, communications, consumer, and industrial applications.

Key electrical specifications include a drain-source voltage of 30V and a continuous drain current of 6.3A at 25°C ambient. The drain-source on-state resistance (RDSon) is a maximum of 30mOhm at 7A and 10V gate-source voltage. The device operates within a temperature range of -55°C to 150°C.

Packaged in an 8-lead SOIC (SOT96-1) surface mount package, the PHN203,518 is designed for efficient integration into various electronic circuits. Its dual N-channel configuration and logic level gate drive make it a versatile component for applications such as DC-to-DC converters and lithium-ion battery systems.

PHN203,518 Quick Information

Product Type: MOSFET

Canonical Name: Nexperia PHN203 Dual N-channel Logic Level FET

Subcategory: Dual N-channel FET

PHN203,518 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PHN203,518 Estimated Pricing

Qty	Low	High
1+	$1.96	$1.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

PHN203,518 Features

Dual N-channel logic level MOSFET.
30V drain-source voltage rating.
6.3A continuous drain current.
Low 30mOhm on-state resistance.
8-SOIC surface mount package.

PHN203,518 Applications

Suitable for high frequency applications.
Designed for logic level gate drive.
Used in DC-to-DC converters.
Ideal for lithium-ion battery applications.

PHN203,518 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the PHN203,518?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the PHN203,518?

The continuous drain current is 6.3A.

What is the on-state resistance (RDSon) of the PHN203,518?

The maximum on-state resistance is 30mOhm at 7A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the PHN203,518 MOSFET supplied in?

The PHN203,518 is supplied in an 8-SOIC (SOT96-1) surface mount package.

Is the PHN203,518 suitable for logic level gate drive?

Yes, the PHN203,518 is designed for logic level gate drive sources.

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Nexperia USA Inc.
AEC Qualified	No
Automotive Grade	No
Configuration	2 N-Channel (Dual)
Current	6.3A
Drain to Source Voltage (Vdss)	30V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14.6nC @ 10V
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 20V
Junction Temperature	-55°C ~ 150°C
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power	2W
Rds On (Max) @ Id, Vgs	30mOhm @ 7A, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	8-SO
Supplier Package	8-SO
Technology	TrenchMOS logic level FET
Vgs(th) (Max) @ Id	2V @ 1mA