| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
415 pcs
|
415 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The Nexperia PHK12NQ03LT is an N-channel enhancement mode field-effect transistor designed with TrenchMOS™ technology, housed in a plastic SO8 package. This logic level FET is suitable for various applications, including DC-to-DC converters and portable equipment.
Key electrical characteristics include a drain-source voltage (Vds) of up to 30 V and a continuous drain current (Id) of up to 11.8 A at 25°C ambient temperature. The total power dissipation (Ptot) is rated at 2.5 W under pulsed conditions. It features low on-state resistance (RDSon) of typically 14 mΩ and fast switching speeds.
The device operates within a junction temperature range of -55°C to +150°C and a storage temperature range of -55°C to +150°C. The SO8 package is designed for surface mounting.
This MOSFET is designed for applications requiring efficient power management and fast response times, making it a versatile component for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
±20V
SO8 surface-mount
-55°C to +150°C
14mΩ
11.8A at 25°C ambient under pulsed conditions (tp ≤ 10s)
440mJ at 7.7A drain current, 2.35ms pulse, VDD ≤ 30V
