PHB45NQ10T,118 The Nexperia PHB45NQ10T,118 is an N-channel MOSFET with a 100V drain-source voltage and 47A continuous current. It features low on-state resistance and is supplied in a TO-263-3 surface-mount package.
Mfr Part #:

PHB45NQ10T,118

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PHB45NQ10T,118 is an N-channel MOSFET with a 100V drain-source voltage and 47A continuous current. It features low on-state resistance and is supplied in a TO-263-3 surface-mount package.
✓ Total Stock: 1,600 pcs
$ Price Range: $2.27

PHB45NQ10T,118 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

PHB45NQ10T,118 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

PHB45NQ10T,118 Description

Short technical summary and product information.

The Nexperia PHB45NQ10T,118 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It is designed for applications requiring higher operating power due to its low thermal resistance and low conduction losses from its low on-state resistance.

 

Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 47A at 25°C case temperature with a 10V gate-source voltage. The on-state resistance (RdsOn) is a maximum of 22.5mΩ at 25A and 10V gate drive. The device operates within a temperature range of -55°C to 175°C.

 

This MOSFET is suitable for high-frequency applications due to its fast switching characteristics. It is packaged in a TO-263-3 surface-mount package, with mounting base connected to the drain. Applications include DC-to-DC converters and switched-mode power supplies.

PHB45NQ10T,118 Quick Information

Product Type: MOSFET
Canonical Name: Nexperia PHB45NQ10T,118 N-Channel MOSFET
Subcategory: MOSFET

PHB45NQ10T,118 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PHB45NQ10T,118 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PHB45NQ10T,118 Features

  • N-channel enhancement mode MOSFET.
  • 100V drain-source voltage rating.
  • 47A continuous drain current.
  • Low on-state resistance (22.5mΩ max).
  • TO-263-3 surface-mount package.

PHB45NQ10T,118 Applications

  • Ideal for power switching in power supplies
  • Suitable for motor control circuits
  • Used in high-current electronic switching
  • Applicable in automotive power modules

PHB45NQ10T,118 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the PHB45NQ10T,118?

The drain-source voltage (Vds) is 100V.

What is the continuous drain current for the PHB45NQ10T,118?

The continuous drain current is 47A at 25°C case temperature with a 10V gate-source voltage.

What is the on-state resistance (RdsOn) of this MOSFET?

The maximum on-state resistance is 22.5mΩ at 25A drain current and 10V gate-source voltage.

What is the operating temperature range for the PHB45NQ10T,118?

The operating temperature range is -55°C to 175°C.

What package type is the PHB45NQ10T,118 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab) surface-mount package.

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