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PH6530AL115 POWER FIELD-EFFECT TRANSISTOR
Mfr Part #:

PH6530AL115

Mfr Name: NXP Semiconductors
NXP Semiconductors
POWER FIELD-EFFECT TRANSISTOR
Stock on Request

PH6530AL115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Drain to Source Voltage (Vdss)
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PH6530AL115 Description

Short technical summary and product information.
POWER FIELD-EFFECT TRANSISTOR

PH6530AL115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PH6530AL115 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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PH9030AL115
PH9030AL115
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The NXP Semiconductors PH9030AL115 is an N-Channel MOSFET with a 30V drain-to-source voltage and 61A continuous drain current. It features a low on-resistance of 8mOhm at 15A, 10V.
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PSMN1R4-30YLDX
PSMN1R4-30YLDX
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The Nexperia PSMN1R4-30YLDX is an N-channel logic level MOSFET designed for high efficiency applications. It features a 30V drain-source voltage and a low on-state resistance.
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PSMN2R2-30YLC,115
PSMN2R2-30YLC,115
Nexperia USA Inc.
The Nexperia PSMN2R2-30YLC,115 is an N-channel MOSFET designed for industrial, communications, and domestic equipment. It features a 30V drain-source voltage and 100A continuous current capability.
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