PH9030AL115 The NXP Semiconductors PH9030AL115 is an N-Channel MOSFET with a 30V drain-to-source voltage and 61A continuous drain current. It features a low on-resistance of 8mOhm at 15A, 10V.
Mfr Part #:

PH9030AL115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors PH9030AL115 is an N-Channel MOSFET with a 30V drain-to-source voltage and 61A continuous drain current. It features a low on-resistance of 8mOhm at 15A, 10V.
✓ Total Stock: 7,917 pcs
$ Price Range: $2.27

PH9030AL115 Available from 1 distributor

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PH9030AL115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

PH9030AL115 Description

Short technical summary and product information.

This NXP Semiconductors PH9030AL115 is a POWER FIELD-EFFECT TRANSISTOR designed for surface mount applications. It is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 61A at 25°C.

 

The MOSFET offers a low on-resistance (Rds On) of 8mOhm at 15A and 10V gate-source voltage. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.15V at 1mA, a maximum gate charge (Qg) of 17.8 nC at 10V, and a maximum input capacitance (Ciss) of 1006 pF at 12V.

 

Packaged in an LFPAK56, Power-SO8 (SC-100, SOT-669), this component is suitable for various power management applications. Its technology is MOSFET (Metal Oxide), and it belongs to the TrenchMOS™ series.

 

This part is designed for efficient power switching and control in electronic circuits. Its specifications make it suitable for applications requiring high current handling and low conduction losses.

PH9030AL115 Quick Information

Product Type: MOSFET
Series: TrenchMOS™
Canonical Name: NXP Semiconductors PH9030AL,115 N-Channel MOSFET
Subcategory: N-Channel

PH9030AL115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PH9030AL115 Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PH9030AL115 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 61A continuous drain current capability.
  • Low 8mOhm on-resistance at 15A, 10V.
  • Surface mount LFPAK56, Power-SO8 package.
  • TrenchMOS™ technology for efficient performance.

PH9030AL115 Applications

  • Ideal for power switching circuits.
  • Suitable for high current applications.
  • Used in power management designs.
  • Efficient conduction loss applications.

PH9030AL115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the PH9030AL115 MOSFET?

The drain-to-source voltage (Vdss) for the PH9030AL115 is 30V.

What is the continuous drain current for the PH9030AL115?

The continuous drain current (Id) at 25°C for the PH9030AL115 is 61A.

What is the on-resistance of the PH9030AL115 at specified conditions?

The maximum on-resistance (Rds On) for the PH9030AL115 is 8mOhm at 15A drain current and 10V gate-source voltage.

What is the gate threshold voltage for the PH9030AL115?

The maximum gate threshold voltage (Vgs(th)) for the PH9030AL115 is 2.15V at 1mA.

What is the package type for the PH9030AL115?

The PH9030AL115 is supplied in an LFPAK56, Power-SO8 package, also referred to as SC-100, SOT-669.

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