| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,917 pcs
|
7917 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This NXP Semiconductors PH9030AL115 is a POWER FIELD-EFFECT TRANSISTOR designed for surface mount applications. It is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 61A at 25°C.
The MOSFET offers a low on-resistance (Rds On) of 8mOhm at 15A and 10V gate-source voltage. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.15V at 1mA, a maximum gate charge (Qg) of 17.8 nC at 10V, and a maximum input capacitance (Ciss) of 1006 pF at 12V.
Packaged in an LFPAK56, Power-SO8 (SC-100, SOT-669), this component is suitable for various power management applications. Its technology is MOSFET (Metal Oxide), and it belongs to the TrenchMOS™ series.
This part is designed for efficient power switching and control in electronic circuits. Its specifications make it suitable for applications requiring high current handling and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the PH9030AL115 is 30V.
The continuous drain current (Id) at 25°C for the PH9030AL115 is 61A.
The maximum on-resistance (Rds On) for the PH9030AL115 is 8mOhm at 15A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) for the PH9030AL115 is 2.15V at 1mA.
The PH9030AL115 is supplied in an LFPAK56, Power-SO8 package, also referred to as SC-100, SOT-669.