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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PESD5V0S2BT,215 is a bidirectional ESD protection diode designed to safeguard two data lines from electrostatic discharge and other transient damage. This diode features a low capacitance, making it suitable for high-speed data lines. It provides robust protection with an ESD rating of up to 30 kV according to IEC 61000-4-2 level 4.
Key electrical characteristics include a reverse standoff voltage of 5 V, a low clamping voltage of 14 V at a peak pulse current of 12 A, and an ultra-low leakage current of 5 nA at 5 V. The diode capacitance is typically 35 pF at 1 MHz.
Packaged in a compact SOT23 (TO-236AB) surface-mounted device plastic package, the PESD5V0S2BT,215 is ideal for applications such as cellular handsets and accessories, portable electronics, computers and peripherals, communication systems, and audio/video equipment. Its AEC-Q101 qualification ensures reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 5 V.
The typical diode capacitance is 35 pF at 1 MHz and 0 V.
The maximum clamping voltage is 14 V at a peak pulse current of 12 A.
The maximum peak pulse power is 130 W for an 8/20 µs pulse.
The device offers ESD protection up to 30 kV according to IEC 61000-4-2 level 4.
It is supplied in a SOT23 surface-mounted plastic package.