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4,200 pcs
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4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PESD5V0F1USF is an extremely low capacitance unidirectional ESD protection diode housed in an ultra-small DSN0603-2 (SOD962) SMD package. This diode is engineered to safeguard a single signal line against damage from electrostatic discharge (ESD) and other transient events.
Key electrical characteristics include an extremely low diode capacitance of 0.6 pF, making it suitable for high-speed data lines. It provides robust ESD protection up to ±10 kV according to IEC 61000-4-2 standards for both contact and air discharge. The device also features an ultra-low leakage current of 1 nA and a reverse standoff voltage of 5 V.
With a rated peak pulse current of 3 A (8/20 μs waveform), the PESD5V0F1USF is designed for demanding applications. Its compact size and surface-mount capability make it ideal for integration into space-constrained designs.
Applications for this ESD protection diode include cellular handsets and accessories, portable electronics, communication systems, and computers and peripherals. The unidirectional design ensures protection for one signal line.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse standoff voltage is 5 V.
The typical diode capacitance is 0.6 pF at 1 MHz.
The rated peak pulse current is 3 A for an 8/20 μs pulse.
It offers ESD protection up to ±10 kV according to IEC 61000-4-2.
The ultra low leakage current is 1 nA.
It is in a DSN0603-2 (SOD962) ultra small SMD package.