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RQJ0303PGDQA The Renesas RQJ0303PGDQA is a P-Channel MOS FET designed for power switching applications. It features low on-resistance and high-speed switching capabilities.
Mfr Part #:

RQJ0303PGDQA

Available from 1 distributors
Mfr Name: Renesas
Renesas
The Renesas RQJ0303PGDQA is a P-Channel MOS FET designed for power switching applications. It features low on-resistance and high-speed switching capabilities.
✓ Total Stock: 200,000 pcs
$ Price Range: $0.75

RQJ0303PGDQA Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

RQJ0303PGDQA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Storage Temperature
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RQJ0303PGDQA Description

Short technical summary and product information.

The Renesas RQJ0303PGDQA is a Silicon P Channel MOS FET designed for power switching applications. It offers a low on-resistance of 54 mΩ typical at VGS = –10 V and ID = –1.6 A, along with low drive current and high-speed switching.

 

Key electrical characteristics include a drain-to-source breakdown voltage of -30 V and a gate-to-source voltage range of +10 V / -20 V. The device exhibits an input capacitance of 625 pF typical and an output capacitance of 111 pF typical.

 

Packaged in an MPAK (PLSP0003ZB-A), this surface-mount device is suitable for various power management and switching circuits. The operating temperature range is up to 150°C, with a storage temperature range of -55°C to +150°C.

RQJ0303PGDQA Quick Information

Product Type: MOSFET
Canonical Name: RQJ0303PGDQA Silicon P Channel MOS FET
Subcategory: Specialized ICs

RQJ0303PGDQA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RQJ0303PGDQA Estimated Pricing

Qty Low High
1+ $0.75 $0.75

Estimated market price range - modelled values for guidance only, not live distributor offers.

RQJ0303PGDQA Features

  • Low on-resistance of 54 mΩ typical.
  • High-speed switching capability.
  • 4.5 V gate drive capability.
  • MPAK surface mount package.
  • Operates up to 150°C channel temperature.

RQJ0303PGDQA Applications

  • Ideal for low-voltage power management circuits.
  • Suitable for load switching applications.
  • Used in battery-powered portable devices.
  • Applicable in DC-DC converter designs.

RQJ0303PGDQA FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the RQJ0303PGDQA?

The drain-source breakdown voltage is -30 V minimum.

What is the continuous drain current rating?

The continuous drain current is -3.3 A.

What is the typical on-resistance?

Typical RDS(on) is 54 mΩ at VGS = -10 V and 76 mΩ at VGS = -4.5 V.

What package does the RQJ0303PGDQA come in?

It is available in an MPAK surface-mount package (package code PLSP0003ZB-A).

What is the operating junction temperature range?

The maximum channel temperature is 150 °C and storage temperature range is -55 °C to +150 °C.

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