PESD12VS1UL,315 The Nexperia PESD12VS1UL,315 is a unidirectional ESD protection diode designed for signal line protection. It features a low leakage current and high ESD protection capabilities.
Mfr Part #:

PESD12VS1UL,315

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The Nexperia PESD12VS1UL,315 is a unidirectional ESD protection diode designed for signal line protection. It features a low leakage current and high ESD protection capabilities.
✓ Total Stock: 4,123 pcs
$ Price Range: $0.97

PESD12VS1UL,315 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,123 pcs
4123 pcs On Request 1 On Request On Request On Request On Request On Request

PESD12VS1UL,315 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type

PESD12VS1UL,315 Description

Short technical summary and product information.

The Nexperia PESD12VS1UL,315 is a unidirectional ElectroStatic Discharge (ESD) protection diode housed in an ultra-small SOD882 leadless surface-mounted device (SMD) plastic package. This component is engineered to safeguard a single signal line from damage caused by ESD events and other transient surges.

 

Key features include an ultra-low leakage current of less than 700 nA and robust ESD protection up to 30 kV, meeting IEC 61000-4-2 level 4 standards. It offers a maximum peak pulse power of 150W and a low clamping voltage of 20V. The diode capacitance is typically 38 pF at 1 MHz and 0V.

 

This AEC-Q101 qualified diode is suitable for protecting high-speed data lines, computers and peripherals, communication systems, and audio/video equipment. Its small footprint makes it ideal for space-constrained applications.

 

The PESD12VS1UL,315 is designed for surface mounting, facilitating integration into various electronic assemblies.

PESD12VS1UL,315 Quick Information

Product Type: TVS Diode
Series: PESDxS1UL
Canonical Name: PESD12VS1UL,315 Unidirectional ESD Protection Diode
Subcategory: Unidirectional ESD Protection Diode

PESD12VS1UL,315 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PESD12VS1UL,315 Estimated Pricing

Qty Low High
1+ $0.97 $0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

PESD12VS1UL,315 Features

  • Ultra small SMD plastic package.
  • ESD protection up to 30 kV.
  • Low clamping voltage of 20V.
  • Ultra low leakage current < 700 nA.
  • AEC-Q101 qualified.

PESD12VS1UL,315 Applications

  • Computers and peripherals.
  • Communication systems.
  • Audio and video equipment.
  • High-speed data lines.

PESD12VS1UL,315 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage for the PESD12VS1UL,315?

The reverse standoff voltage is 12 V.

What is the maximum clamping voltage of the PESD12VS1UL,315?

The maximum clamping voltage is 20 V.

What is the peak pulse power rating for this TVS diode?

The maximum peak pulse power is 150 W.

What is the diode capacitance at 1 MHz?

The diode capacitance is typically 38 pF and a maximum of 75 pF at 1 MHz and 0 V.

What type of package is the PESD12VS1UL,315 in?

It is in a SOD882 leadless ultra small SMD plastic package.

PESD12VS1UL,315 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
5962-9682201QDA
5962-9682201QDA
Texas Instruments
The Texas Instruments 5962-9682201QDA is a MILITARY 4-CH, 2-INPUT, 2-V TO 5 current regulation transistor. It features a W CFP package with 14 pins.
View Part
PUMD10,115
PUMD10,115
NXP Semiconductors
The NXP Semiconductors PUMD10,115 is a pre-biased bipolar transistor array featuring 1 NPN and 1 PNP transistor. It operates at up to 50V and 100mA.
View Part
PDTC114TT,235
PDTC114TT,235
NXP Semiconductors
The NXP Semiconductors PDTC114TT,235 is an NPN Resistor-Equipped Transistor (RET) with built-in bias resistors. It offers a collector-emitter voltage of 50V and an output current capability of 100mA.
View Part
PUMH9,115
PUMH9,115
NXP Semiconductors
The NXP Semiconductors PUMH9,115 is an NPN/NPN double resistor-equipped transistor featuring built-in bias resistors and a 50V collector-emitter voltage. It is supplied in a SOT-363 package.
View Part
Home
Account

Categories