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2,742 pcs
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2742 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The NXP Semiconductors PESD12VS1UJ is a unidirectional ElectroStatic Discharge (ESD) protection diode. It is housed in a compact SOD-323F surface-mount plastic package, making it suitable for space-constrained applications. This device is engineered to protect a single signal line from damage caused by ESD events and other transient overvoltages.
Key electrical characteristics include a maximum peak pulse power (PPP) of 600 W and a reverse standoff voltage (VRWM) of 12 V. The diode exhibits a low clamping voltage, typically 19 V, and a very low leakage current of 1 nA. It provides robust ESD protection, rated up to 30 kV for contact discharge according to IEC 61000-4-2 level 4.
The PESD12VS1UJ is qualified according to AEC-Q101 and recommended for automotive applications. Its applications span across computers and peripherals, audio and video equipment, cellular handsets and accessories, communication systems, portable electronics, and medical and industrial equipment.
The component is supplied in a SOD-323F package, a small surface-mounted device with dimensions of 1.7 mm x 1.25 mm x 0.7 mm. This small form factor facilitates integration into various electronic designs.
The reverse standoff voltage is 12 V maximum at 25 °C.
The rated peak pulse power is 600 W.
Typical clamping voltage is 19 V; maximum is 27 V.
The rated peak pulse current is 22.5 A for an 8/20 µs pulse.
Minimum breakdown voltage is 13.3 V.
The PESD12VS1UJ is offered in SOD323F (SOD-323) surface-mount package.