| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61,020 pcs
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61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMZ1,115 is a versatile NPN/PNP double transistor designed for general-purpose switching and amplification applications. It comes in an ultra-small SOT666 surface-mounted device (SMD) plastic package, measuring 1.6 x 1.2 mm.
Key electrical specifications include a collector-emitter voltage of 40V and a collector current of 100mA per transistor. The device boasts a DC current gain (hFE) of 120 at 1mA and 6V. It also features a maximum power dissipation of 300mW per device and a junction temperature rating of 150°C.
This transistor is suitable for applications such as complementary MOSFET drivers for switch-mode power supplies and complementary drivers for audio amplifiers. Its small footprint and straight leads facilitate self-alignment during soldering, reducing PCB area and pick-and-place costs. The device operates within a temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMZ1,115 is 40V when the base is open.
The maximum collector current (IC) for the PEMZ1,115 is 100mA.
The minimum DC current gain (hFE) for the PEMZ1,115 is 120 at a collector current of 1mA and collector-emitter voltage of 6V.
The PEMZ1,115 is supplied in a SOT-666 package.
The operating temperature range for the PEMZ1,115 is -65°C to 150°C.