5962-9682201QDA
Texas Instruments
The Texas Instruments 5962-9682201QDA is a MILITARY 4-CH, 2-INPUT, 2-V TO 5 current regulation transistor. It features a W CFP package with 14 pins.
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238 pcs
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238 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The NXP Semiconductors PEMT1,115 is a PNP/PNP double transistor housed in an ultra-small and flat SOT-666 surface-mounted device (SMD) plastic package. This component is designed for general purpose switching and amplification applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a collector current (IC) of -100mA per transistor. The DC current gain (hFE) is typically 120 under specific test conditions (VCE = -6V, IC = -1mA, Tamb = 25°C).
The transistor features a total power dissipation of 300mW per device and operates within an ambient temperature range of -65°C to 150°C. Its small package size (1.6 x 1.2 mm) and straight leads facilitate self-alignment during soldering, potentially reducing PCB area and pick-and-place costs.
This device is suitable for applications requiring compact, high-performance transistor solutions. Its NPN complement is the PEMX1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMT1,115 is -40V.
The maximum collector current (IC) for the PEMT1,115 is -100mA per transistor.
The DC current gain (hFE) is typically 120 under conditions of VCE = -6V, IC = -1mA, and Tamb = 25°C.
The PEMT1,115 is supplied in a SOT-666 plastic surface-mounted device (SMD) package.
The PEMT1,115 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PEMT1,115 is 1.
