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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMH9,115 is a dual NPN transistor with built-in bias resistors, designed for surface mount applications. This Resistor-Equipped Transistor (RET) comes in a compact SOT-666 package, making it suitable for space-constrained designs.
Key electrical characteristics include a 50V collector-emitter voltage (VCEO) and a maximum output current (IO) of 100mA. The device features integrated resistors with typical values of 10 kΩ for R1 and 47 kΩ for R2. It also specifies a DC current gain (hFE) of 100 at 5mA/5V and a saturation voltage (Vce(sat)) of 100mV at 250µA/5mA. The power dissipation is rated at 300mW.
This component simplifies circuit design by reducing the need for external resistors and can lower component count and pick-and-place costs. It is qualified to AEC-Q101 standards, indicating suitability for automotive and industrial applications. The RET is ideal for low-current peripheral driving and control of IC inputs, replacing general-purpose transistors in digital applications.
Mounting is via surface mount technology. The SOT-666 package is ultra-small and flat, facilitating high-density board layouts.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMH9,115 is 50V when the base is open.
The PEMH9,115 has a maximum output current capability of 100mA.
The PEMH9,115 features integrated resistors with a typical value of 10 kΩ for R1 (input) and 47 kΩ for R2.
The PEMH9,115 is supplied in a SOT-666 package.
The PEMH9,115 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the PEMH9,115 is 1.