| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,704 pcs
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1704 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMH13,115 is a dual NPN resistor-equipped transistor (RET) designed for surface mounting in a SOT-666 package. This component features built-in bias resistors, simplifying circuit design and reducing component count.
Key electrical characteristics include a collector-emitter voltage (Vceo) of 50V and an output current (IO) capability of 100mA per transistor. The integrated bias resistor R1 has a typical value of 4.7kΩ, with a range from 3.3kΩ to 6.1kΩ. The ratio R2/R1 is typically 10. The transistor array is rated for a power dissipation of 300mW.
This device is suitable for applications such as low current peripheral drivers and control of IC inputs. Its pre-biased nature and integrated resistors simplify digital applications, reducing pick and place costs and overall component count. The AEC-Q101 qualification indicates suitability for automotive applications.
The PEMH13,115 is supplied in a SOT-666 surface-mount package, designed for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the PEMH13,115 is 50V.
The maximum output current (IO) capability is 100mA.
The integrated bias resistor R1 is typically 4.7kΩ, with a range of 3.3kΩ to 6.1kΩ.
The PEMH13,115 is supplied in a SOT-666 package.
Yes, the PEMH13,115 is AEC-Q101 qualified.