| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,020 pcs
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33020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMH11,115 is a dual NPN resistor-equipped transistor (RET) in a surface-mount SOT-666 package. This component features built-in bias resistors, simplifying circuit design and reducing component count. It is designed for applications such as low current peripheral drivers and control of IC inputs.
Key electrical characteristics include a 50V collector-emitter voltage (VCEO) and a 100mA output current capability (IO). The integrated bias resistor R1 has a typical value of 10 kΩ. The transistor type is 2 NPN - Pre-Biased (Dual), with a typical DC current gain (hFE) of 30 at 5mA and 5V. Saturation voltage (Vce Sat) is a maximum of 150mV at 500µA and 10mA.
This device is suitable for replacing general-purpose transistors in digital applications, offering reduced pick and place costs. The SOT-666 package is ultra-small and flat, making it ideal for space-constrained designs. The component is rated for 300mW power dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMH11,115 is 50V.
The PEMH11,115 has a maximum output current (IO) of 100mA.
The integrated bias resistor R1 in the PEMH11,115 has a typical value of 10 kΩ.
The PEMH11,115 is supplied in a SOT-666 package.
The PEMH11,115 has a power dissipation rating of 300mW.
The DC current gain (hFE) of the PEMH11,115 is a minimum of 30 at 5mA and 5V.
The saturation voltage (Vce Sat) for the PEMH11,115 is a maximum of 150mV at 500µA and 10mA.