PEMD9,315 The Nexperia USA Inc. PEMD9,315 is a resistor-equipped transistor featuring 1 NPN and 1 PNP element in a single SOT-666 package. It offers a 50V collector-emitter voltage and 100mA output current capability.
Mfr Part #:

PEMD9,315

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PEMD9,315 is a resistor-equipped transistor featuring 1 NPN and 1 PNP element in a single SOT-666 package. It offers a 50V collector-emitter voltage and 100mA output current capability.
✓ Total Stock: 659 pcs
$ Price Range: $0.99

PEMD9,315 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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659 pcs
659 pcs On Request 1 On Request On Request On Request On Request On Request

PEMD9,315 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Output Current
Power
Power Dissipation
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PEMD9,315 Description

Short technical summary and product information.

The Nexperia USA Inc. PEMD9,315 is a dual NPN/PNP resistor-equipped transistor (RET) designed for surface mounting in a compact SOT-666 package. This component integrates two transistors with built-in bias resistors, simplifying circuit design and reducing component count. It features a collector-emitter breakdown voltage of 50V and a maximum output current of 100mA per transistor.

 

The integrated resistors include a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2). This configuration is suitable for applications such as low current peripheral drivers and digital input control. The device is specified with a maximum power dissipation of 300mW and a DC current gain (hFE) of at least 100 at 5mA collector current and 5V collector-emitter voltage. The Vce saturation is a maximum of 100mV at 250µA base current and 5mA collector current.

 

Mounting is via surface mount technology, and the package is SOT-666. The standard package quantity is 8000 units on tape and reel. This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

PEMD9,315 Quick Information

Product Type: Resistor-Equipped Transistor
Canonical Name: NPN/PNP double Resistor-Equipped Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

PEMD9,315 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PEMD9,315 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PEMD9,315 Features

  • NPN/PNP double resistor-equipped transistor.
  • Integrated 10 kΩ and 47 kΩ bias resistors.
  • 50V collector-emitter breakdown voltage.
  • 100mA maximum output current.
  • Surface mount SOT-666 package.

PEMD9,315 Applications

  • Used in switching circuits
  • Suitable for amplification applications
  • Ideal for compact electronic designs
  • Applicable in consumer electronics
  • Used in industrial control systems

PEMD9,315 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the PEMD9,315?

The collector-emitter breakdown voltage is 50V.

What is the maximum output current for the PEMD9,315?

The maximum output current is 100mA.

What are the integrated bias resistor values in the PEMD9,315?

The PEMD9,315 has an integrated R1 bias resistor of 10 kΩ and an R2 bias resistor of 47 kΩ.

What is the package type for the PEMD9,315?

The PEMD9,315 is available in SOT-563 and SOT-666 packages.

Is the PEMD9,315 RoHS compliant?

Yes, the PEMD9,315 is RoHS3 Compliant.

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