| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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157 pcs
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157 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMD9,115 is a dual NPN/PNP transistor with built-in bias resistors, designed for surface-mount applications. This component is housed in a compact SOT-666 package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 50V and a continuous output current capability of 100mA. The device integrates bias resistors with a typical input resistance (R1) of 10 kΩ and a typical resistor ratio (R2/R1) of 4.7. The saturation voltage (Vce Sat) is a maximum of 100mV at 250µA base current and 5mA collector current.
This resistor-equipped transistor simplifies circuit design by reducing component count and pick-and-place costs. It is qualified to AEC-Q101 standards, indicating suitability for demanding applications. The PEMD9,115 is ideal for low-current peripheral driving and controlling IC inputs, replacing general-purpose transistors in digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMD9,115 is a maximum of 50V.
The continuous output current capability of the PEMD9,115 is 100mA.
The PEMD9,115 has a typical input resistor (R1) of 10 kΩ and a typical resistor ratio (R2/R1) of 4.7.
The PEMD9,115 is supplied in a SOT-666 package.
The maximum operating temperature for the PEMD9,115 is 150°C.