| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1 pcs
$0.11
|
1 pcs |
$0.11
|
1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The Nexperia PEMD30,115 is a surface-mount NPN/PNP double resistor-equipped transistor (RET) designed for simplified circuit design and reduced component count. It features built-in bias resistors with a typical value of 2.2 kΩ for the input (R1) and an open R2 configuration.
This device provides a 50V collector-emitter voltage and a 100mA output current capability per transistor. The Vce saturation is a maximum of 150mV at 500µA base current and 10mA collector current. The DC current gain (hFE) is a minimum of 30 at 20mA collector current and 5V collector-emitter voltage.
The PEMD30,115 is housed in a SOT-666 package, suitable for surface mounting. Its integrated resistors simplify designs for low-current peripheral drivers and switching loads, offering a cost-saving alternative in various applications.
Key electrical specifications include a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. The device also has a maximum power dissipation of 300mW.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
The maximum output current (IO) is 100mA.
The bias resistor R1 has a typical value of 2.2 kΩ.
The PEMD30,115 is available in SOT-563 and SOT-666 packages.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.