| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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650 pcs
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650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN/PNP resistor-equipped transistor array, part number PEMD16,115 from Nexperia, offers simplified circuit design by integrating built-in bias resistors. This reduces component count and pick-and-place costs.
The device has a collector-emitter voltage rating of 50V and an output current capability of 100mA. It features a typical input bias resistor (R1) of 22 kΩ and a typical R2/R1 bias resistor ratio of 2.1. The DC current gain (hFE) is a minimum of 80 at 5mA and 5V, with a Vce saturation of a maximum of 150mV at 500µA and 10mA.
Designed for applications such as low current peripheral drivers and control of IC inputs, the PEMD16,115 is housed in a SOT-666 surface-mount package. It has a total power dissipation of 300mW at an ambient temperature of 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the PEMD16,115 is 50V.
The output current (Io) for the PEMD16,115 is 100mA.
The PEMD16,115 is supplied in a SOT-666 package.
The total power dissipation for the PEMD16,115 is 300mW at an ambient temperature of 25°C.