| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMD15,115 is a surface-mount NPN/PNP double resistor-equipped transistor (RET) designed for digital applications. It features built-in bias resistors with a typical value of 4.7 kΩ for both R1 and R2, simplifying circuit design and reducing component count.
This device boasts a 50V collector-emitter breakdown voltage and a 100mA output current capability per transistor. The Vce saturation is specified at a maximum of 150mV at 500µA/10mA, and the DC current gain (hFE) is a minimum of 30 at 10mA/5V. The maximum power dissipation is 300mW.
Packaged in a compact SOT-666 or SOT-563 package, the PEMD15,115 is suitable for applications requiring reduced component count and simplified circuit design, such as low current peripheral drivers and control of IC inputs. Its AEC-Q101 qualification indicates suitability for automotive and industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the PEMD15,115 is 50V.
The PEMD15,115 has a maximum output current capability of 100mA.
The PEMD15,115 features integrated bias resistors with a typical value of 4.7kΩ for both R1 and R2.
The PEMD15,115 is supplied in a SOT-666 package, also compatible with SOT-563.
The PEMD15,115 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PEMD15,115 is 1 (Unlimited).
The PEMD15,115 is REACH Unaffected.