| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMD14,115 is a resistor-equipped transistor designed for simplified circuit design and reduced component count. This device integrates both NPN and PNP transistors, each with built-in bias resistors.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous output current of 100mA. The integrated bias resistor (R1) has a typical value of 47kΩ. The transistor array is suitable for applications such as low current peripheral driving, control of IC inputs, and as a replacement for general-purpose transistors in digital applications.
This component is available in a SOT-666 surface-mount package. The design simplifies circuit construction by reducing the number of external components required, leading to lower pick and place costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum continuous output current is 100mA.
The typical value of the bias resistor (R1) is 47kΩ.
The PEMD14,115 is available in SOT-666 and SOT363 packages.
The total power dissipation is 300mW.