| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17,020 pcs
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17020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PEMD12,115 is a dual NPN/PNP Resistor-Equipped Transistor (RET) designed for surface mount applications. It features built-in bias resistors with a typical value of 47 kΩ for the input resistor (R1).
This component is suitable for low current peripheral driver and control of IC inputs. It boasts a 50V collector-emitter voltage and a 100mA output current capability per transistor. The device is housed in a compact SOT-666 package, reducing component count and simplifying circuit design.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 150mV at 500µA base current and 10mA collector current.
The PEMD12,115 is qualified to AEC-Q101 standards, indicating its suitability for automotive and industrial applications. Its integrated resistors simplify circuit layouts and reduce pick-and-place costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PEMD12,115 is 50V.
The maximum output current (IO) for the PEMD12,115 is 100mA.
The integrated bias resistor R1 in the PEMD12,115 has a typical value of 47kΩ.
The PEMD12,115 is supplied in a SOT-666 package.
The RoHS status of the PEMD12,115 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PEMD12,115 is 1 Unlimited.