| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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115,020 pcs
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115020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. PDTD143ETR is an NPN Resistor-Equipped Transistor (RET) designed for surface mounting in a SOT-23 (TO-236AB) package. This component offers a 50V collector-emitter voltage and a maximum output current capability of 500mA.
Key electrical characteristics include built-in bias resistors with a nominal value of 4.7 kΩ for both R1 and R2, simplifying circuit design and reducing component count. It provides a typical DC current gain (hFE) of 60 at 50mA and 5V, with a Vce saturation of 100mV maximum at 2.5mA and 50mA. The transition frequency is rated at 225 MHz.
With a maximum power dissipation of 320 mW (single-sided PCB) or 460 mW (4-layer PCB) at 25°C ambient temperature, this transistor is suitable for high-temperature applications up to 175°C. Its applications include IC input control and as a cost-saving alternative to BC807 series transistors in digital applications.
The device is specified for a wide operating temperature range from -55°C to 175°C. The SOT-23 package is ideal for space-constrained designs, and its surface-mount capability facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTD143ETR is 50V.
The PDTD143ETR transistor has a maximum output current (IO) capability of 500mA.
The PDTD143ETR features built-in bias resistors with R1 (input) typically 4.7 kΩ and an R2/R1 ratio typically of 1.
The PDTD143ETR is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The maximum power dissipation (Ptot) for the PDTD143ETR is 320 mW when mounted on a single-sided PCB at 25°C ambient temperature.
The PDTD143ETR can operate in an ambient temperature range of -55°C to 175°C.