PDTD123YUX The Nexperia USA Inc. PDTD123YUX is an NPN Resistor-Equipped Transistor in a SOT-323 package. It offers a 50V collector-emitter voltage and 500mA output current capability.
Mfr Part #:

PDTD123YUX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PDTD123YUX is an NPN Resistor-Equipped Transistor in a SOT-323 package. It offers a 50V collector-emitter voltage and 500mA output current capability.
✓ Total Stock: 6,000 pcs
$ Price Range: $1.17

PDTD123YUX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 20+ On Request On Request

PDTD123YUX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Input Voltage
Mounting Type
Output Current
Power
Power Dissipation (Max)
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PDTD123YUX Description

Short technical summary and product information.

The Nexperia USA Inc. PDTD123YUX is an NPN Resistor-Equipped Transistor (RET) designed for simplified circuit designs and reduced component counts. It features built-in bias resistors, with R1 at 2.2 kΩ and R2 at 10 kΩ.

 

This transistor has a maximum collector-emitter voltage of 50V and an output current capability of 500mA. It operates with a transition frequency of 225 MHz and a maximum power dissipation of 300 mW. The device is housed in a compact SOT-323 (SC-70) surface-mount package.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 50mA and 5V, and a Vce saturation of 100mV maximum at 2.5mA collector current and 50mA base current. The input voltage range is -5V to +12V.

 

This component is suitable for applications requiring simplified digital logic input and switching loads. Its resistor-equipped design makes it a cost-effective alternative in various digital applications.

PDTD123YUX Quick Information

Product Type: Resistor-Equipped Transistor
Series: PDTD1xxxU series
Canonical Name: NPN Resistor-Equipped Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

PDTD123YUX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTD123YUX Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTD123YUX Features

  • NPN Resistor-Equipped Transistor
  • 50V collector-emitter voltage
  • 500mA output current capability
  • Integrated 2.2kΩ and 10kΩ resistors
  • SOT-323 surface-mount package

PDTD123YUX Applications

  • Used in RF switching circuits
  • Suitable for high-speed amplification
  • Ideal for compact electronic modules
  • Applicable in switching power supplies

PDTD123YUX FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PDTD123YUX?

The maximum collector-emitter voltage (VCEO) for the PDTD123YUX is 50V.

What is the maximum output current capability of the PDTD123YUX transistor?

The PDTD123YUX transistor has a maximum output current (IO) capability of 500mA.

What are the integrated bias resistor values in the PDTD123YUX?

The PDTD123YUX features an input bias resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 10 kΩ.

What package type is the PDTD123YUX available in?

The PDTD123YUX is available in a SOT-323 (SC-70) surface-mount package.

What is the transition frequency of the PDTD123YUX?

The transition frequency (fT) for the PDTD123YUX is 225 MHz.

What is the maximum power dissipation for the PDTD123YUX?

The maximum power dissipation (Pd) for the PDTD123YUX is 300 mW.

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