| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The Nexperia USA Inc. PDTD123YUX is an NPN Resistor-Equipped Transistor (RET) designed for simplified circuit designs and reduced component counts. It features built-in bias resistors, with R1 at 2.2 kΩ and R2 at 10 kΩ.
This transistor has a maximum collector-emitter voltage of 50V and an output current capability of 500mA. It operates with a transition frequency of 225 MHz and a maximum power dissipation of 300 mW. The device is housed in a compact SOT-323 (SC-70) surface-mount package.
Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 50mA and 5V, and a Vce saturation of 100mV maximum at 2.5mA collector current and 50mA base current. The input voltage range is -5V to +12V.
This component is suitable for applications requiring simplified digital logic input and switching loads. Its resistor-equipped design makes it a cost-effective alternative in various digital applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PDTD123YUX is 50V.
The PDTD123YUX transistor has a maximum output current (IO) capability of 500mA.
The PDTD123YUX features an input bias resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 10 kΩ.
The PDTD123YUX is available in a SOT-323 (SC-70) surface-mount package.
The transition frequency (fT) for the PDTD123YUX is 225 MHz.
The maximum power dissipation (Pd) for the PDTD123YUX is 300 mW.