PDTD123YT,215 The Nexperia USA Inc. PDTD123YT,215 is an NPN pre-biased bipolar junction transistor. It offers a 50V collector-emitter voltage and 500mA output current capability.
Mfr Part #:

PDTD123YT,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PDTD123YT,215 is an NPN pre-biased bipolar junction transistor. It offers a 50V collector-emitter voltage and 500mA output current capability.
✓ Total Stock: 658,020 pcs
$ Price Range: $1.17

PDTD123YT,215 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
658,020 pcs
658020 pcs On Request 1 On Request On Request On Request On Request On Request

PDTD123YT,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Power Dissipation
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PDTD123YT,215 Description

Short technical summary and product information.

The PDTD123YT,215 from Nexperia USA Inc. is an NPN resistor-equipped transistor (RET) designed for digital applications. It features built-in bias resistors, simplifying circuit design and reducing component count.

 

Key electrical specifications include a 50V collector-emitter voltage and a 500mA DC output current capability. The integrated resistors have a typical value of 2.2 kΩ for R1 (input) and a typical R2/R1 ratio of 4.55. The transistor offers a minimum DC current gain (hFE) of 70 at 50mA and 5V, with a maximum Vce saturation of 300mV at 2.5mA and 50mA.

 

This device has a maximum power dissipation of 250 mW. It is housed in a surface-mount TO-236AB package, also known as SOT-23-3 or SC-59A. The built-in resistors simplify circuit design and reduce pick-and-place costs, making it a cost-effective alternative for certain digital applications.

 

Applications include controlling IC inputs and switching loads in automotive and industrial segments. The transistor's design with integrated resistors reduces component count and simplifies overall circuit construction.

PDTD123YT,215 Quick Information

Product Type: Transistor
Series: PDTD123Y
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Single, Pre-Biased

PDTD123YT,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTD123YT,215 Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTD123YT,215 Features

  • NPN pre-biased bipolar transistor.
  • 50V collector-emitter voltage.
  • 500mA maximum output current.
  • Integrated 2.2kΩ and 10kΩ resistors.
  • 250mW maximum power dissipation.

PDTD123YT,215 Applications

  • Controlling IC inputs.
  • Switching loads.
  • Digital applications.
  • Automotive segment use.
  • Industrial segment use.

PDTD123YT,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PDTD123YT,215?

The collector-emitter voltage (VCEO) for the PDTD123YT,215 is 50V.

What is the maximum output current of the PDTD123YT,215 transistor?

The PDTD123YT,215 transistor has a maximum DC output current (IO) of 500 mA.

What are the integrated resistor values in the PDTD123YT,215?

The PDTD123YT,215 has an integrated bias resistor R1 of 2.2 kΩ and a typical R2/R1 ratio of 4.55.

What is the power dissipation rating for the PDTD123YT,215?

The PDTD123YT,215 has a maximum power dissipation of 250 mW.

What package type is the PDTD123YT,215 supplied in?

The PDTD123YT,215 is supplied in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.

Home
Account

Categories