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658,020 pcs
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658020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTD123YT,215 from Nexperia USA Inc. is an NPN resistor-equipped transistor (RET) designed for digital applications. It features built-in bias resistors, simplifying circuit design and reducing component count.
Key electrical specifications include a 50V collector-emitter voltage and a 500mA DC output current capability. The integrated resistors have a typical value of 2.2 kΩ for R1 (input) and a typical R2/R1 ratio of 4.55. The transistor offers a minimum DC current gain (hFE) of 70 at 50mA and 5V, with a maximum Vce saturation of 300mV at 2.5mA and 50mA.
This device has a maximum power dissipation of 250 mW. It is housed in a surface-mount TO-236AB package, also known as SOT-23-3 or SC-59A. The built-in resistors simplify circuit design and reduce pick-and-place costs, making it a cost-effective alternative for certain digital applications.
Applications include controlling IC inputs and switching loads in automotive and industrial segments. The transistor's design with integrated resistors reduces component count and simplifies overall circuit construction.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTD123YT,215 is 50V.
The PDTD123YT,215 transistor has a maximum DC output current (IO) of 500 mA.
The PDTD123YT,215 has an integrated bias resistor R1 of 2.2 kΩ and a typical R2/R1 ratio of 4.55.
The PDTD123YT,215 has a maximum power dissipation of 250 mW.
The PDTD123YT,215 is supplied in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.