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28,020 pcs
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28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PDTD123ET,215 is a 500 mA NPN Resistor-Equipped Transistor (RET) family member. It is designed for digital applications in automotive and industrial segments, offering a cost-saving alternative to other series. This transistor features built-in bias resistors, which simplifies circuit design and reduces component count.
Key electrical specifications include a 50 V collector-emitter voltage and a 500 mA output current capability. The integrated bias resistors have a typical value of 2.2 kΩ for R1, with a typical R2/R1 ratio of 1.0. The device has a maximum power dissipation of 250 mW and a minimum DC current gain (hFE) of 40 at 50mA and 5V. The Vce saturation is a maximum of 300mV at 2.5mA and 50mA.
This component is supplied in a TO-236AB (SOT-23) surface mount package, also referred to as TO-236-3, SC-59, or SOT-23-3. Its compact size and integrated resistors make it suitable for applications requiring simplified circuit design and reduced pick-and-place costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTD123ET,215 is 50 V.
The PDTD123ET,215 has a continuous output current (IC) capability of 500 mA.
The PDTD123ET,215 is available in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.
The PDTD123ET,215 features integrated bias resistors with a typical value of 2.2 kΩ for R1 and a typical R2/R1 ratio of 1.0.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.