| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
106,020 pcs
|
106020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia USA Inc. PDTD114ETR is an NPN Pre-Biased Transistor designed for various electronic applications. It features a collector-emitter breakdown voltage of 50V and an output current capability of 500mA.
This transistor operates with a transition frequency of 225 MHz and has a maximum power dissipation of 320 mW. It is housed in a TO-236AB package, suitable for surface mounting.
The PDTD114ETR includes built-in bias resistors, simplifying circuit design and reducing component count. It is specified with a minimum DC current gain (hFE) of 70 at 50mA and 5V, and a Vce Saturation of 100mV at 2.5mA and 50mA.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
The maximum output current (IO) is 500mA.
The transition frequency is 225 MHz.
The PDTD114ETR is in a TO-236-3, SC-59, SOT-23-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.