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PDTD113ZT-QR The Nexperia PDTD113ZT-QR is an NPN pre-biased transistor designed for digital applications. It features built-in bias resistors and a 500 mA output current capability.
Mfr Part #:

PDTD113ZT-QR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PDTD113ZT-QR is an NPN pre-biased transistor designed for digital applications. It features built-in bias resistors and a 500 mA output current capability.
✓ Total Stock: 55,020 pcs
$ Price Range: $1.17

PDTD113ZT-QR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
55,020 pcs
On Request
55020 pcs On Request 1 On Request On Request On Request On Request On Request
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PDTD113ZT-QR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Junction Temperature
Mounting Type
Output Current
Power
Resistor
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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PDTD113ZT-QR Description

Short technical summary and product information.

The Nexperia PDTD113ZT-QR is an NPN Resistor-Equipped Transistor (RET) in a compact SOT23 surface-mounted device (SMD) plastic package. This component simplifies circuit design by incorporating built-in bias resistors, reducing overall component count and pick-and-place costs.

 

Key electrical specifications include a collector-emitter voltage of 50 V and an output current capability of 500 mA. The device features a typical bias resistor R1 of 1 kΩ and a typical bias resistor ratio R2/R1 of 10. It is qualified according to AEC-Q101 and recommended for automotive and industrial digital applications.

 

The transistor is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. The maximum power dissipation is 250 mW at an ambient temperature of 25 °C, with a junction temperature limit of 150 °C.

PDTD113ZT-QR Quick Information

Product Type: Resistor-Equipped Transistor
Canonical Name: NPN 500 mA, 50 V Resistor-Equipped Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

PDTD113ZT-QR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTD113ZT-QR Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTD113ZT-QR Features

  • NPN pre-biased transistor with integrated resistors.
  • 500 mA output current capability.
  • 50 V collector-emitter voltage.
  • Compact SOT23 surface-mount package.
  • Qualified for automotive applications.

PDTD113ZT-QR Applications

  • Used in automotive digital applications.
  • Suitable for industrial digital segments.
  • Ideal for controlling IC inputs.
  • Effective for switching loads.

PDTD113ZT-QR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PDTD113ZT-QR?

The collector-emitter voltage (VCEO) for the PDTD113ZT-QR is 50 V.

What is the maximum output current of the PDTD113ZT-QR transistor?

The PDTD113ZT-QR transistor has a maximum output current (IO) of 500 mA.

What type of package is the PDTD113ZT-QR supplied in?

The PDTD113ZT-QR is supplied in a SOT23 package, also referred to as TO-236AB.

What is the typical value of the input bias resistor (R1) in the PDTD113ZT-QR?

The typical value of the input bias resistor (R1) in the PDTD113ZT-QR is 1 kΩ.

What is the typical ratio of the bias resistors (R2/R1) in the PDTD113ZT-QR?

The typical ratio of the bias resistors (R2/R1) in the PDTD113ZT-QR is 10.

Is the PDTD113ZT-QR qualified for automotive applications?

Yes, the PDTD113ZT-QR is qualified according to AEC-Q101 and recommended for use in automotive applications.

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