| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34,020 pcs
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34020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTD113ET,215 is a NPN Resistor-Equipped Transistor (RET) from Nexperia USA Inc. This component features built-in bias resistors, specifically R1 = 1 kΩ and R2 = 1 kΩ, which simplifies circuit design and reduces component count.
Key electrical specifications include a 50V collector-emitter voltage (VCEO) and a 500mA DC output current (IO). The transistor has a typical DC current gain (hFE) of 33 at 50mA and 5V, with a maximum Vce saturation of 300mV at 2.5mA and 50mA. The maximum collector cutoff current is 500nA, and it has a maximum power dissipation of 250mW.
This device is supplied in a TO-236AB (SOT-23) surface mount package, making it suitable for automated assembly processes. The integrated resistors simplify digital applications in automotive and industrial segments, serving as a cost-effective alternative for controlling IC inputs and switching loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTD113ET,215 is 50V.
The PDTD113ET,215 transistor has a maximum DC output current (IO) of 500mA.
The PDTD113ET,215 has built-in bias resistors with R1 (input) typically 1 kΩ and an R2/R1 ratio of typically 1.0.
The PDTD113ET,215 is supplied in a TO-236AB, SC-59, SOT-23-3 surface mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.