| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,480 pcs
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18480 pcs | On Request | 1 | On Request | On Request | 1548+ | On Request | On Request | |
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2,817 pcs
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2817 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTC144EU is an NPN bipolar junction transistor (BJT) from NXP Semiconductors, featuring integrated resistors for simplified circuit design. This pre-biased transistor is designed for applications requiring a compact and efficient solution.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It also has a maximum collector power dissipation of 300mW. The DC current gain (hFE) is a minimum of 100 at VCE = 5V and IC = 2mA, with a minimum transition frequency (fT) of 150MHz under the same conditions.
The integrated resistors consist of an input resistor (R1) of 47 kΩ and a collector resistor (R2) of 47 kΩ, which helps in reducing component count and simplifying board layout. The transistor is housed in a SOT-723 surface-mount package, making it suitable for space-constrained applications.
This component is ideal for general-purpose switching and amplification tasks where a pre-biased transistor configuration offers design advantages. Its surface-mount package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V (open base).
The maximum continuous collector current is 100mA.
The PDTC144EU is available in a SOT-723 surface mount package.
The input resistor R1 is 47kΩ and the collector resistor R2 is also 47kΩ.
The minimum DC current gain is 100 at VCE = 5V and IC = 2mA.
The minimum transition frequency is 150 MHz at VCE = 5V and IC = 2mA.
The maximum collector power dissipation is 300mW.