PDTC114ET215
NXP Semiconductors
The NXP Semiconductors PDTC114ET215 is an NPN Resistor-Equipped Transistor (RET) in a SOT23 package. It features built-in bias resistors and a 100 mA output current capability.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 2242 | On Request | On Request |
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The PDTC143ET235 from NXP Semiconductors is a single, pre-biased bipolar junction transistor (BJT) designed for small signal applications. This NPN transistor offers a maximum collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 250mW.
It is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. The pre-biased configuration simplifies circuit design by integrating base resistors.
This component is part of the Single, Pre-Biased Bipolar Transistors category, suitable for various general-purpose amplification and switching tasks where a compact, surface-mount solution is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The maximum power dissipation is 250mW.
The PDTC143ET235 is available in a TO-236-3, SC-59, SOT-23-3 package.
The mounting type is Surface Mount.
