| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN pre-biased bipolar transistor, part number PDTC143EM,315 from Nexperia USA Inc., is designed for surface mount applications. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor has a power dissipation rating of 250mW.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 10mA and 5V, and a Vce saturation of 150mV maximum at 500µA collector current and 10mA. It also includes base resistor R1 and emitter base resistor R2, both rated at 4.7 kΩ. The current cutoff is a maximum of 1µA.
The PDTC143EM,315 is supplied in a SOT-883 package, also known as SC-101. Its surface mount design facilitates integration into various electronic circuits. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This transistor is suitable for general-purpose amplification and switching applications where a pre-biased configuration simplifies circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum collector current is 100mA.
The power dissipation is 250mW.
The minimum DC current gain (hFE) is 30 at 10mA and 5V.
The Vce saturation is 150mV maximum at 500µA collector current and 10mA.
This is an NPN pre-biased bipolar transistor.
It is supplied in a SOT-883 surface mount package.