| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
169,020 pcs
|
169020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Power | |
| Resistor | |
| Supplier Device Package | |
| Supplier Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NPN resistor-equipped transistor (RET) from Nexperia is designed for general-purpose switching and amplification applications. It features built-in bias resistors, simplifying circuit design and reducing component count.
The PDTC123YU,115 has a collector-emitter voltage of 50V and a continuous output current of 100mA. The input bias resistor (R1) is typically 2.2 kΩ, and the bias resistor ratio (R2/R1) is typically 4.5. It has a power dissipation rating of 200mW.
This component is housed in a SOT-323 (SC-70) surface-mount package. Its integrated resistors simplify board layout and reduce manufacturing costs by minimizing the number of discrete components required.
Key electrical characteristics include a minimum DC current gain (hFE) of 35 at 5mA collector current and 5V collector-emitter voltage. The Vce saturation voltage is a maximum of 150mV at 500µA base current and 10mA collector current.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTC123YU,115 is 50V.
The maximum continuous output current (IO) is 100 mA.
The input bias resistor (R1) is typically 2.2 kΩ.
The power dissipation is 200 mW.
The PDTC123YU,115 is available in a SOT-323 package.
The minimum DC current gain (hFE) is 35 at 5mA collector current and 5V collector-emitter voltage.
The Vce saturation voltage is a maximum of 150mV at 500µA base current and 10mA collector current.