| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
147,000 pcs
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147000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The PDTC123TU,115 from Nexperia USA Inc. is an NPN Resistor-Equipped Transistor (RET) designed for surface mounting. This component features built-in bias resistors, simplifying circuit design and reducing component count. It offers a collector-emitter voltage of up to 50V and an output current capability of 100 mA.
The transistor has a typical bias resistor R1 value of 2.2 kΩ. It is housed in a compact SOT-323 (SC-70) package, suitable for space-constrained applications. The device is rated for 200 mW of power dissipation and has a DC current gain (hFE) of a minimum of 30 at 20mA and 5V. Its Vce saturation is a maximum of 150mV at 500µA and 10mA.
This pre-biased transistor is ideal for digital applications, control of IC inputs, and switching loads. Its integrated resistors simplify circuit design and reduce pick-and-place costs, making it a cost-effective alternative for certain applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50V.
The output current capability is 100 mA.
The bias resistor R1 is 2.2 kΩ.
It is supplied in a SC-70, SOT-323 package.
It is a surface mount device.