| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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160,020 pcs
|
160020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
107,754 pcs
|
107754 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PDTC123ET,215 is an NPN resistor-equipped transistor designed for general purpose switching and amplification applications. It features integrated bias resistors (R1 = 2.2 kΩ, R2 = 2.2 kΩ), simplifying circuit design and reducing component count.
This transistor has a maximum collector-emitter voltage (Vceo) of 50V and a continuous output current (Io) of 100mA. The DC current gain (hFE) is a minimum of 30 at 20mA and 5V. The saturation voltage (Vce) is a maximum of 150mV at 500µA and 10mA.
Packaged in a surface-mount TO-236-3, SC-59, or SOT-23-3 (TO-236AB) package, it is suitable for automated assembly processes. The power dissipation is rated at 250 mW.
Applications include inverter and interface circuits, and general circuit drivers. Its pre-biased design simplifies implementation in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the PDTC123ET,215 is 50V.
The PDTC123ET,215 transistor has a continuous output current (Io) of 100mA.
The PDTC123ET,215 is supplied in a surface mount TO-236-3, SC-59, or SOT-23-3 package.
The PDTC123ET,215 has built-in bias resistors with values of 2.2 kΩ for both R1 and R2.