| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The NXP Semiconductors PDTB123YT,215 is a PNP Resistor-Equipped Transistor (RET) from the PDTB123Y series. This component is designed for digital applications in automotive and industrial segments, offering a cost-saving alternative for certain digital applications. It features built-in bias resistors, which simplify circuit design and reduce component count.
Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V and a maximum DC output current (IO) of -500 mA. The integrated bias resistors have a typical value of R1 = 2.2 kΩ and a typical R2/R1 ratio of 4.55. The transistor is housed in a TO-236AB surface-mount package.
This device simplifies circuit design by reducing the need for external components and can lower pick-and-place costs in manufacturing. Its PNP configuration and integrated resistors make it suitable for controlling IC inputs and switching loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50 V
-500 mA
R1 is typically 2.2 kΩ with an R2/R1 ratio of 4.55.
TO-236AB
RoHS3 Compliant
1 Unlimited