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PDTB114ETR The Nexperia PDTB114ETR is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 500mA output current. It features built-in bias resistors and is housed in a SOT-23 package.
Mfr Part #:

PDTB114ETR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PDTB114ETR is a PNP Pre-Biased Transistor with a 50V collector-emitter voltage and 500mA output current. It features built-in bias resistors and is housed in a SOT-23 package.
✓ Total Stock: 46,020 pcs
$ Price Range: $1.17

PDTB114ETR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
46,020 pcs
On Request
46020 pcs On Request 1 On Request On Request On Request On Request On Request
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PDTB114ETR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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PDTB114ETR Description

Short technical summary and product information.

The Nexperia PDTB114ETR is a PNP Resistor-Equipped Transistor (RET) designed for various applications requiring simplified circuit design and reduced component count. This transistor operates with a collector-emitter voltage (VCEO) of up to -50V and an output current (IO) capability of -500mA.

 

Key electrical characteristics include a typical DC current gain (hFE) of 70 at 50mA and 5V, and a Vce saturation of 100mV at 2.5mA and 50mA. It features integrated bias resistors, with R1 and R2 both specified at 10 kΩ, simplifying external circuitry. The transistor operates at frequencies up to 140 MHz.

 

Packaged in a compact SOT-23 (TO-236AB) surface-mount plastic package, the PDTB114ETR is suitable for high-temperature applications up to 175°C. Its design makes it a cost-saving alternative to discrete transistor configurations in digital applications and switching loads.

PDTB114ETR Quick Information

Product Type: Transistor
Series: PDTB1xxxT
Canonical Name: PDTB114ETR PNP Resistor-Equipped Transistor
Subcategory: Pre-Biased BJT

PDTB114ETR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTB114ETR Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTB114ETR Features

  • PNP Pre-Biased Transistor in SOT-23.
  • 50V collector-emitter voltage rating.
  • 500mA maximum output current.
  • Integrated 10kΩ bias resistors.
  • Suitable for high-temperature applications.

PDTB114ETR Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Ideal for switching loads.
  • Used in IC input control.
  • Cost-saving alternative for digital applications.

PDTB114ETR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PDTB114ETR?

The collector-emitter voltage (VCEO) for the PDTB114ETR is -50V.

What is the maximum output current of the PDTB114ETR transistor?

The PDTB114ETR transistor has a maximum output current (IO) of -500mA.

What are the integrated bias resistor values for the PDTB114ETR?

The PDTB114ETR features integrated bias resistors R1 and R2, both with a nominal value of 10 kΩ.

What package type is the PDTB114ETR supplied in?

The PDTB114ETR is supplied in a TO-236-3, SC-59, SOT-23-3 package.

What is the operating temperature range for the PDTB114ETR?

The PDTB114ETR can operate in an ambient temperature range from -55°C to 175°C, with a maximum junction temperature of 175°C.

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