PDTA144ET,215 The PDTA144ET,215 from Nexperia USA Inc. is a Pre-Biased PNP Bipolar Junction Transistor. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA.
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PDTA144ET,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The PDTA144ET,215 from Nexperia USA Inc. is a Pre-Biased PNP Bipolar Junction Transistor. It features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA.
✓ Total Stock: 1,768,020 pcs
$ Price Range: $1.17

PDTA144ET,215 Available from 1 distributor

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PDTA144ET,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PDTA144ET,215 Description

Short technical summary and product information.

The PDTA144ET,215 is a Pre-Biased PNP Bipolar Junction Transistor (BJT) manufactured by Nexperia USA Inc. This component is designed for surface mount applications and comes in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device has a maximum power dissipation of 250mW. It is equipped with internal base and emitter base resistors, both specified at 47 kΩ. The minimum DC current gain (hFE) is 80 at 5mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. The collector cutoff current is a maximum of 1µA.

 

This transistor is suitable for various electronic circuits requiring a pre-biased PNP transistor configuration. Its surface mount package facilitates integration into compact PCB designs. The component is RoHS3 compliant, indicating adherence to environmental standards regarding hazardous substances.

PDTA144ET,215 Quick Information

Product Type: Pre-Biased PNP Transistor
Canonical Name: PDTA144ET,215 Pre-Biased PNP Bipolar Junction Transistor
Subcategory: Pre-Biased

PDTA144ET,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PDTA144ET,215 Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

PDTA144ET,215 Features

  • Pre-Biased PNP Bipolar Junction Transistor.
  • 50V Collector-Emitter Breakdown Voltage.
  • 100mA Maximum Collector Current.
  • 250mW Maximum Power Dissipation.
  • Surface Mount TO-236AB Package.

PDTA144ET,215 Applications

  • Suitable for general amplification circuits.
  • Used in switching applications.
  • Ideal for compact PCB designs.
  • Designed for pre-biased configurations.

PDTA144ET,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the PDTA144ET,215?

The collector-emitter breakdown voltage is 50V.

What is the maximum collector current for this transistor?

The maximum collector current is 100mA.

What is the power dissipation rating of the PDTA144ET,215?

The maximum power dissipation is 250mW.

What are the internal resistor values for the PDTA144ET,215?

The base resistor (R1) and emitter base resistor (R2) are both 47 kΩ.

What is the minimum DC current gain (hFE) for this transistor?

The minimum DC current gain is 80 at 5mA collector current and 5V collector-emitter voltage.

What is the Vce saturation voltage?

The Vce saturation voltage is a maximum of 150mV at 500µA base current and 10mA collector current.

What is the package type for the PDTA144ET,215?

The package is TO-236-3, SC-59, SOT-23-3, also referred to as TO-236AB.

PDTA144ET,215 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
PDTA144ET,235
PDTA144ET,235
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
View Part
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