| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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58,020 pcs
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58020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PDTA124EU,115 from Nexperia is a PNP resistor-equipped transistor designed for simplified circuit designs and reduced component counts. It operates with a collector-emitter voltage of up to 50V and an output current of 100mA.
This device features built-in bias resistors, with both R1 and R2 typically measuring 22 kΩ. The transistor type is PNP pre-biased, offering a typical DC current gain (hFE) of 60 at 5mA collector current and 5V collector-emitter voltage. The collector-emitter saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current.
Packaged in a surface-mount SOT-323 (SC-70) case, the PDTA124EU,115 is suitable for applications requiring reduced pick and place costs. Its power dissipation is rated at 200 mW at 25°C ambient temperature. This transistor is well-suited for general purpose switching, amplification, inverter, and interface circuits.
Key features include built-in bias resistors, simplified circuit design, and a reduction in component count. The SOT-323 package is standard for surface mount applications. The device offers a 50V collector-emitter voltage and 100mA output current capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTA124EU,115 is -50 V.
The maximum output current (IO) for the PDTA124EU,115 is -100 mA.
The built-in bias resistors R1 and R2 for the PDTA124EU,115 are both typically 22 kΩ.
The PDTA124EU,115 is supplied in a SOT-323 (SC-70) surface mount package.
The power dissipation (Ptot) for the PDTA124EU,115 is 200 mW at 25°C ambient temperature.
The DC current gain (hFE) is a minimum of 60 at 5mA collector current and 5V collector-emitter voltage.