| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61,020 pcs
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61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PDTA115ET,215 is a PNP resistor-equipped transistor from the PDTA115E series. It is designed for general purpose switching and amplification applications, as well as inverter and interface circuits.
Key electrical characteristics include a collector-emitter voltage (Vceo) of -50V and a continuous output current (Io) of -20mA. The device incorporates built-in bias resistors, with both R1 and R2 having a nominal value of 100 kΩ. This integration simplifies circuit design, reduces component count, and lowers pick-and-place costs.
The transistor has a maximum power dissipation of 250 mW. It is supplied in a TO-236-3, SC-59, SOT-23-3 surface mount package (TO-236AB).
This component is suitable for applications requiring simplified circuitry and reduced component count, offering a convenient solution for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) for the PDTA115ET,215 is -50V.
The maximum DC output current (Io) for the PDTA115ET,215 is -20mA.
The PDTA115ET,215 has built-in bias resistors R1 and R2, each with a nominal value of 100 kΩ.
The PDTA115ET,215 is available in a TO-236-3, SC-59, SOT-23-3 package.
The PDTA115ET,215 is a surface mount device.