| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
187,020 pcs
|
187020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The Nexperia USA Inc. PDTA114YT,215 is a single, pre-biased PNP bipolar junction transistor (BJT) designed for surface mount applications. It operates with a maximum voltage of 50V and can handle up to 100mA of current.
This transistor offers a minimum DC current gain (hFE) of 100 at 5mA and 5V, with a Vce saturation of 100mV maximum at 250µA and 5mA. It includes an integrated resistor with a value of 47 kΩ.
The component is packaged in a TO-236-3, SC-59, or SOT-23-3 package, specifically the TO-236AB supplier device package. Its power dissipation is rated at 250 mW. The device is RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PDTA114YT,215 transistor has a voltage rating of 50V.
The continuous collector current for the PDTA114YT,215 is 100 mA.
The power dissipation for the PDTA114YT,215 is 250 mW.
The PDTA114YT,215 is supplied in the TO-236-3, SC-59, SOT-23-3 package, specifically the TO-236AB supplier device package.
Yes, the PDTA114YT,215 is RoHS3 compliant.