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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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29,020 pcs
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29020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Collector-Emitter Saturation Resistance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| voltage (Maximum @ open collector) | |
| voltage (Maximum @ open emitter) |
The PBSS8110Z,135 from Nexperia USA Inc. is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for high-voltage applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current of 1A, with a peak collector current of 3A.
This transistor boasts a low collector-emitter saturation voltage (VCEsat) of 200mV at 100mA/1A, contributing to high efficiency and reduced heat generation. Its high collector current capability and high current gain (hFE) at high IC make it suitable for demanding applications. The device operates at a frequency of 100MHz and has a maximum power dissipation of 1.4W at 25°C ambient temperature when mounted on a specific PCB.
Packaged in a SOT-223 (SC-73) surface-mount plastic package, the PBSS8110Z,135 is designed for efficient use of Printed-Circuit Board (PCB) area. Its PNP complement is the PBSS9110Z. Key applications include high-voltage DC-to-DC conversion, MOSFET gate driving, motor control, and automotive power switching.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The operating temperature range is up to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS8110Z,135 is 100V.
The continuous collector current (IC) rating for the PBSS8110Z,135 is 1A.
This transistor is supplied in a SOT-223 surface-mount package.
The maximum operating temperature (TJ) for the PBSS8110Z,135 is 150°C.
The collector-emitter saturation voltage (Vce Sat) is a maximum of 200mV at 100mA base current and 1A collector current.