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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,020 pcs
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5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Ambient Temperature | |
| Base Current (DC) | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Resistance | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package Description | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBSS8110X,135 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for surface mount applications. It comes in a compact SOT-89 (SC-62/TO-243) SMD plastic package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 1A. The transistor features a low collector-emitter saturation voltage (VCEsat) of typically 200mV at 100mA collector current and 1A collector current, contributing to high efficiency and reduced heat generation. Its DC current gain (hFE) is a minimum of 150 at 250mA collector current and 10V collector-emitter voltage.
This transistor is suitable for various applications, including automotive 42V power systems, telecom infrastructure, and industrial segments. It functions effectively as a peripheral driver for low supply voltage applications, such as lamps and LEDs, and for inductive loads like relays, buzzers, and motors. It is also applicable in DC-to-DC converters.
The device operates within a junction temperature range of -65°C to +150°C and has a total power dissipation of up to 0.55W at 25°C ambient temperature when mounted on an FR4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS8110X,135 is 100V.
The continuous collector current (IC) rating for this transistor is 1A.
The PBSS8110X,135 is supplied in a SOT-89 surface mount package.
The operating junction temperature range is up to 150°C.
The maximum collector-emitter saturation voltage (Vce Sat) is 200mV at 100mA base current and 1A collector current.