PBSS8110T-QVL The Nexperia USA Inc. PBSS8110T-QVL is an NPN low VCEsat transistor. It features a 100V collector-emitter voltage and 1A collector current capability.
Mfr Part #:

PBSS8110T-QVL

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PBSS8110T-QVL is an NPN low VCEsat transistor. It features a 100V collector-emitter voltage and 1A collector current capability.
Total Stock: 10,000 pcs
$ Price Range: $0.48

PBSS8110T-QVL Available from 1 distributor

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PBSS8110T-QVL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Resistance (RCEsat)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Operating Temperature (TJ)
Peak Collector Current (ICM)
Power
Power Dissipation (Ptot)
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS8110T-QVL Description

Short technical summary and product information.

The Nexperia USA Inc. PBSS8110T-QVL is an NPN low VCEsat transistor designed for various applications including automotive 42V power, telecom infrastructure, and industrial power management. It offers a high collector current capability of 1A and a peak collector current of 3A.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 100V and a saturation resistance (RCEsat) of 200mΩ at 1A and 100mA base current. The transistor operates at frequencies up to 100MHz and has a DC current gain (hFE) of 150 minimum at 250mA collector current and 10V Vce.

 

This component is housed in a compact SOT-23 (TO-236AB) surface-mounted plastic package. It is qualified according to AEC-Q101 and recommended for automotive applications. The operating junction temperature is rated up to 150°C.

PBSS8110T-QVL Quick Information

Product Type: NPN Low VCEsat Transistor
Canonical Name: PBSS8110T-QVL NPN Low VCEsat Transistor
Subcategory: Bipolar (BJT) - Single

PBSS8110T-QVL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS8110T-QVL Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS8110T-QVL Features

  • NPN low VCEsat transistor.
  • 100V collector-emitter voltage.
  • 1A continuous collector current.
  • Qualified for automotive applications.
  • Compact SOT-23 package.

PBSS8110T-QVL Applications

  • Automotive 42V power systems.
  • Telecom infrastructure power.
  • Industrial power management.
  • DC/DC converter circuits.
  • Peripheral driver applications.

PBSS8110T-QVL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS8110T-QVL?

The collector-emitter voltage (VCEO) is 100V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 1A.

What package type is the PBSS8110T-QVL supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

What is the operating temperature range?

The operating junction temperature (TJ) is up to 150°C.

Is this transistor RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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