PBSS8110T,215 The Nexperia PBSS8110T,215 is an NPN low VCEsat transistor in a SOT23 package. It offers a 100V collector-emitter voltage and 1A collector current capability.
Mfr Part #:

PBSS8110T,215

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS8110T,215 is an NPN low VCEsat transistor in a SOT23 package. It offers a 100V collector-emitter voltage and 1A collector current capability.
✓ Total Stock: 1,537,020 pcs
$ Price Range: $0.48

PBSS8110T,215 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,500,000 pcs
1500000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
37,020 pcs
37020 pcs On Request 1 On Request On Request On Request On Request On Request

PBSS8110T,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS8110T,215 Description

Short technical summary and product information.

The Nexperia PBSS8110T,215 is an NPN low VCEsat transistor designed for various applications including automotive 42V power, telecom infrastructure, and industrial power management. It features a low collector-emitter saturation voltage (VCEsat) and a high collector current capability.

 

This transistor operates with a maximum collector-emitter voltage of 100V and a continuous collector current of 1A, with a peak collector current of 3A. The saturation resistance is typically 165mΩ at 1A and 100mA base current. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package, making it suitable for space-constrained designs.

 

Key features include a DC current gain (hFE) of at least 150 at 250mA and 10V, and a frequency response up to 100MHz. The device has a maximum power dissipation of 480mW and an operating junction temperature of up to 150°C.

 

Applications for the PBSS8110T,215 include DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors. Its PNP complement is the PBSS9110T.

PBSS8110T,215 Quick Information

Product Type: NPN Transistor
Canonical Name: PBSS8110T,215 NPN low VCEsat transistor
Subcategory: Single

PBSS8110T,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS8110T,215 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS8110T,215 Features

  • NPN low VCEsat transistor.
  • 100V collector-emitter voltage.
  • 1A continuous collector current.
  • SOT23 surface-mount package.
  • Suitable for automotive and industrial use.

PBSS8110T,215 Applications

  • Used in automotive 42V power systems.
  • Ideal for telecom infrastructure.
  • Applicable in industrial power management.
  • Suitable for DC/DC converters.
  • Drives inductive loads like relays.

PBSS8110T,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS8110T,215?

The maximum collector-emitter voltage (VCEO) for the PBSS8110T,215 is 100V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the PBSS8110T,215 is 1A.

What type of package is the PBSS8110T,215 in?

The PBSS8110T,215 is supplied in a SOT23 (TO-236AB) surface-mount package.

What is the operating temperature range?

The operating junction temperature for the PBSS8110T,215 is up to 150°C.

What are the main applications for this transistor?

This transistor is used in automotive 42V power, telecom infrastructure, industrial power management, DC/DC converters, and for driving inductive loads.

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